Mask Aligner/UV Exposure Station

Mask aligner/UV exposure station (Newport Inc.) is photolithography equipment used for fabrication of micron sized patterns on photoresist. A photolithography mask is aligned on top of a wafer with thin coating of photoresist and is exposed to ultraviolet light. Depending on photoresist type (positive or negative) the exposed areas are removed or remain on the surface after immersing the wafer in a developer solution. The areas uncovered by photoresist can be removed using ion milling, chemical etching or lift-off to create functional film patterns.

Specifications of Mask Aligner/UV exposure station

• 4.25 x 4.25 inch DUV 220 to 260 nm 500 W Flood Exposure Housing using HgXe Short Arc Lamp with Uniformity of +/- 5%, and 350 to 450nm Dichroic Mirror to convert to NUV 350 to 450nm region.
• Digital Exposure Controller to maintain the stability of the lamp as it ages to within +/- 1%, and time exposures from 10 ms to 9999 hours in 0.1 second intervals, and Dose control.
• Mask alignment Fixture with easy 3-Step Alignment to accommodate wafers/substrates from 1 in OD or 1 x 1 in up to 6 in OD or 6 x 6 in; 5 x 5 in mask holder and custom 4 in wafer holder to hold both a 4 in OD and 3 in OD wafer; mounted on a Precision Translation Slide with 24 in travel.
• Splitfield Microscope mounted on X-Y Stage with illumination kits to illuminate both high reflective and non-reflective substrates/wafers; 5x and 10x objectives; and Microscope Video Kit.
• Hand-held Power Meter and Calibrated Probes peaked at 254nms and 365nms.

Sample Data